Open AccessCompetitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold
Author(s) -
Liefeng Feng,
Xiaoming Yang,
Yang Li,
Lining Ding,
Cunda Wang,
Dongsheng Yao,
Xiaocheng Hu,
Hongru Li
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4918971
Subject(s) - lasing threshold , diode , semiconductor laser theory , photon , quantum well laser , quantum tunnelling , threshold voltage , band gap , optoelectronics , laser , electron , spontaneous emission , physics , condensed matter physics , materials science , atomic physics , voltage , quantum dot laser , optics , transistor , quantum mechanics
The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by Ithl and Ithu, as shown in Fig. 2; Ithl is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; Ithu is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (Vj) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at Ithl and Ithu. The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region