Compact model for organic thin-film transistor with Gaussian density of states | Zendy

Long Wang | Zendy; Nianduan Lu | Zendy; Ling Li | Zendy; Zhuoyu Ji | Zendy; Writam Banerjee | Zendy; Ming Liu | Zendy

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Compact model for organic thin-film transistor with Gaussian density of states

Author(s) -

Long Wang,

Nianduan Lu,

Ling Li,

Zhuoyu Ji,

Writam Banerjee,

Ming Liu

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4918622

Subject(s) - thin film transistor , gaussian , transistor , density of states , threshold voltage , materials science , optoelectronics , organic semiconductor , silicon , work (physics) , electronic circuit , voltage , statistical physics , condensed matter physics , nanotechnology , physics , quantum mechanics , layer (electronics)

Developing a compact model for organic thin-film transistors (OTFTs) would be significant for designing organic circuits. Contrasting the traditional silicon transistors, OTFTs are theorized using hopping transport and a Gaussian density of states. In this work, we present a new compact model for OTFTs by introducing hopping transport theory, a Gaussian density of states, and a physical mobility model. Our compact model is completely based on surface potential and its simulations do not require any threshold voltage. Simulations based on this model agree well with experimental data

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