Open AccessNative defects in Tl6SI4: Density functional calculations
Author(s) -
Hongliang Shi,
MaoHua Du
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4917532
Subject(s) - crystallographic defect , acceptor , ionic bonding , dielectric , fermi level , materials science , condensed matter physics , semiconductor , density functional theory , impurity , covalent bond , doping , electrical resistivity and conductivity , chemical physics , electron , chemistry , optoelectronics , ion , computational chemistry , physics , organic chemistry , quantum mechanics
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