Open AccessDefect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers
Author(s) -
Andrew Armstrong,
Benjamin N. Bryant,
Mary H. Crawford,
Daniel Koleske,
Stephen R. Lee,
Jonathan J. Wierer
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4916727
Subject(s) - light emitting diode , materials science , optoelectronics , radiative transfer , diode , photoluminescence , wide bandgap semiconductor , quantum efficiency , non radiative recombination , spontaneous emission , optics , semiconductor , physics , laser , semiconductor materials
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