Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers | Zendy

Yao Guo | Zendy; Liang Meng | Zendy; Jiajia Fu | Zendy; Zhiqiang Liu | Zendy; Xiaoyan Yi | Zendy; Junxi Wang | Zendy; Guohong Wang | Zendy; Jinmin Li | Zendy

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Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers

Author(s) -

Yao Guo,

Liang Meng,

Jiajia Fu,

Zhiqiang Liu,

Xiaoyan Yi,

Junxi Wang,

Guohong Wang,

Jinmin Li

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4916268

Subject(s) - voltage droop , optoelectronics , materials science , diode , band diagram , blocking (statistics) , light emitting diode , wide bandgap semiconductor , current density , stack (abstract data type) , electron , quantum efficiency , quantum well , current (fluid) , band gap , optics , physics , voltage , laser , computer science , computer network , quantum mechanics , voltage divider , thermodynamics , programming language

In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL at the current density of 100 A/cm2

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