Open AccessDirect minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors
Author(s) -
Daniel Zuo,
Runyu Liu,
Daniel Wasserman,
James C. Mabon,
Zhao-Yu He,
Shi Liu,
YongHang Zhang,
Emil Kadlec,
B. V. Olson,
Eric A. Shaner
Publication year - 2015
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4913312
Subject(s) - superlattice , photoluminescence , materials science , optoelectronics , carrier lifetime , photodetector , electron beam induced current , dark current , thermal diffusivity , characterization (materials science) , electron mobility , nanotechnology , silicon , physics , quantum mechanics
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