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Effect of interfacial structures on spin dependent tunneling in epitaxial L1-FePt/MgO/FePt perpendicular magnetic tunnel junctions
Author(s) -
Guang Yang,
D. L. Li,
Shaogang Wang,
Q. L.,
Shiheng Liang,
H. X. Wei,
Xingguo Han,
T. Hesjedal,
R. C. C. Ward,
A. Kohn,
Ayala Elkayam,
Nadav Tal,
Xiaoguang Zhang
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4913265
Subject(s) - condensed matter physics , magnetoresistance , quantum tunnelling , tunnel magnetoresistance , epitaxy , materials science , ferromagnetism , molecular beam epitaxy , transmission electron microscopy , scanning tunneling microscope , perpendicular , layer (electronics) , magnetic field , nanotechnology , physics , quantum mechanics , geometry , mathematics

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