Excellent low-field magnetoresistance effect in Ga-doped MnZn ferrites | Zendy

Hyojin Kim | Zendy; SangIm Yoo | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Excellent low-field magnetoresistance effect in Ga-doped MnZn ferrites

Author(s) -

Hyojin Kim,

SangIm Yoo

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4905446

Subject(s) - materials science , magnetoresistance , doping , ferrite (magnet) , electrical resistivity and conductivity , analytical chemistry (journal) , ion , magnetic field , composite material , optoelectronics , chemistry , electrical engineering , physics , chromatography , quantum mechanics , engineering , organic chemistry

An excellent low field magnetoresistance (LFMR) property was achieved from the Ga-doped (Mn0.8Zn0.2)Fe2O4 (MnZn) ferrites at room temperature (RT). For this study, undoped and Ga-doped MnZn ferrites with the nominal compositions of (Mn0.8Zn0.2)1−xGaxFe2O4 (x = 0 ∼ 0.1) were prepared by the conventional solid state reaction at 1400°C for 2 h in air. From the magneto-transport measurements, Ga-doped MnZn ferrites were found to have not only much lower resistivity values but also greatly improved LFMR ratios in comparison with undoped sample. The highest maximum LFMR ratio of 2.5% at 290 K in 0.5 kOe was achievable from 2 mol% Ga-doped MnZn ferrite. This large LFMR effect is attributable to an increase in spin electrons by Ga3+ ion substitution for the (Mn, Zn)2+ site

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research