Microstructure fabrication process induced modulations in CVD graphene | Zendy

Akitomo Matsubayashi | Zendy; Zhenjun Zhang | Zendy; Ji Ung Lee | Zendy; V. P. LaBella | Zendy

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Microstructure fabrication process induced modulations in CVD graphene

Author(s) -

Akitomo Matsubayashi,

Zhenjun Zhang,

Ji Ung Lee,

V. P. LaBella

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4905068

Subject(s) - graphene , photoresist , raman spectroscopy , materials science , oxide , fabrication , graphene nanoribbons , graphene oxide paper , deposition (geology) , optoelectronics , microstructure , chemical vapor deposition , nanotechnology , composite material , optics , metallurgy , layer (electronics) , medicine , paleontology , physics , alternative medicine , pathology , sediment , biology

The systematic Raman spectroscopic study of a “mimicked” graphene device fabrication is presented. Upon photoresist baking, compressive stress is induced in the graphene which disappears after it is removed. The indirect irradiation from the electron beam (through the photoresist) does not significantly alter graphene characteristic Raman peaks indicating that graphene quality is preserved upon the exposure. The 2D peak shifts and the intensity ratio of 2D and G band, I(2D)/I(G), decreases upon direct metal deposition (Co and Py) suggesting that the electronic modulation occurs due to sp2 C-C bond weakening. In contrast, a thin metal oxide film deposited graphene does not show either the significant 2D and G peaks shift or I(2D)/I(G) decrease upon the metal deposition suggesting the oxide protect the graphene quality in the fabrication process

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