Materials News: Interfacial chemistry and atomic arrangement of ZrO2 − La2/3Sr1/3MnO3 pillar-matrix structures | Zendy

Dan Zhou | Zendy; Wilfried Sigle | Zendy; Eiji Okunishi | Zendy; Yi Wang | Zendy; Marion Kelsch | Zendy; H.U. Habermeier | Zendy; Peter A. van Aken | Zendy

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Materials News: Interfacial chemistry and atomic arrangement of ZrO₂ − La_2/3Sr_1/3MnO₃ pillar-matrix structures

Author(s) -

Dan Zhou,

Wilfried Sigle,

Eiji Okunishi,

Yi Wang,

Marion Kelsch,

H.U. Habermeier,

Peter A. van Aken

Publication year - 2014

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4904819

Subject(s) - materials science , pillar , transmission electron microscopy , valence (chemistry) , high resolution transmission electron microscopy , matrix (chemical analysis) , valence electron , atom probe , atomic diffusion , crystallography , nanotechnology , chemical physics , electron , chemistry , physics , organic chemistry , structural engineering , quantum mechanics , engineering , composite material

We studied ZrO2 − La2/3Sr1/3MnO3 pillar–matrix thin films which were found to show anomalous magnetic and electron transport properties. With the application of an aberration-corrected transmission electron microscope, interfacial chemistry, and atomic-arrangement of the system, especially of the pillar–matrix interface were revealed at atomic resolution. Minor amounts of Zr were found to occupy Mn positions within the matrix. The Zr concentration reaches a minimum near the pillar–matrix interface accompanied by oxygen vacancies. La and Mn diffusion into the pillar was revealed at atomic resolution and a concomitant change of the Mn valence state was observed

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