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This passage presents a design of tunable terahertz metamaterials via transition between indirect and direct electromagnetically induced transparency (EIT) effects by changing semiconductor InSb’s properties to terahertz wave under optical and thermal stimuli. Mechanical model and its electrical circuit model are utilized in analytically calculating maximum transmission of transparency window. Simulated results show consistency with the analytical expressions. The results show that the metamaterials hold 98.4% modulation depth at 189 GHz between 300 K, σInSb =256000 S/m, and 80 K, σInSb =0.0162 S/m conditions , 1360 ps recovery time of the excited electrons in InSb under optical stimulus at 300 K mainly considering the direct EIT effect, and minimum bandwidth 1 GHz

Optically and thermally controlled terahertz metamaterial via transition between direct and indirect electromagnetically induced transparency