Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications
Author(s) -
Eddy Simoen,
Valentina Ferro,
Barry O’Sullivan
Publication year - 2014
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4904082
Subject(s) - deep level transient spectroscopy , dangling bond , heterojunction , materials science , silicon , passivation , carrier lifetime , amorphous silicon , optoelectronics , semiconductor , substrate (aquarium) , solar cell , quantum tunnelling , depletion region , crystallographic defect , capacitance , analytical chemistry (journal) , crystalline silicon , chemistry , nanotechnology , layer (electronics) , crystallography , electrode , oceanography , chromatography , geology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom