Near-infrared emission from mesoporous crystalline germanium
Author(s) -
Abderraouf Boucherif,
Andreas Korinek,
Vincent Aimez,
Richard Arès
Publication year - 2014
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4898643
Subject(s) - germanium , crystallite , materials science , mesoporous material , photoluminescence , wafer , isotropic etching , etching (microfabrication) , band gap , nanostructure , quantum dot , optoelectronics , nanotechnology , analytical chemistry (journal) , silicon , chemistry , metallurgy , biochemistry , layer (electronics) , catalysis , chromatography
Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites
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