Reproducible strain measurement in electronic devices by applying integer multiple to scanning grating in scanning moiré fringe imaging | Zendy

Suhyun Kim | Zendy; Younheum Jung | Zendy; Joong Jung Kim | Zendy; Sunyoung Lee | Zendy; Haebum Lee | Zendy; Yukihito Kondo | Zendy

Open Access

Reproducible strain measurement in electronic devices by applying integer multiple to scanning grating in scanning moiré fringe imaging

Author(s) -

Suhyun Kim,

Younheum Jung,

Joong Jung Kim,

Sunyoung Lee,

Haebum Lee,

Yukihito Kondo

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4897379

Subject(s) - moiré pattern , materials science , optics , scanning electron microscope , scanning transmission electron microscopy , grating , scanning probe microscopy , optoelectronics , physics

Scanning moiré fringe (SMF) imaging by high-angle annular dark field scanning transmission electron microscopy was used to measure the strain field in the channel of a transistor with a CoSi2 source and drain. Nanometer-scale SMFs were formed with a scanning grating size of ds at integer multiples of the Si crystal lattice spacing dl (ds ∼ ndl, n = 2, 3, 4, 5). The moiré fringe formula was modified to establish a method for quantifying strain measurement. We showed that strain fields in a transistor measured by SMF images were reproducible with an accuracy of 0.02%

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