The effect of metal-contacts on carbon nanotube for high frequency interconnects and devices | Zendy

George Chimowa | Zendy; Somnath Bhattacharyya | Zendy

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The effect of metal-contacts on carbon nanotube for high frequency interconnects and devices

Author(s) -

George Chimowa,

Somnath Bhattacharyya

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4894265

Subject(s) - carbon nanotube , materials science , tungsten , electrode , contact resistance , quantum tunnelling , carbon nanotube field effect transistor , optoelectronics , nanotube , nanotechnology , voltage , electrical engineering , transistor , chemistry , metallurgy , field effect transistor , engineering , layer (electronics)

High frequency characterisation of platinum and tungsten contacts on individual multi-walled carbon nanotubes (MWNT) is performed from 10 MHz to 50 GHz. By measuring the scattering parameters of aligned individual MWNTs, we show that metal contacts enhance an inductive response due to the improved MWNT-electrode coupling reducing the capacitive effect. This behaviour is pronounced in the frequency below 10 GHz and strong for tungsten contacts. We explain the inductive response as a result of the interaction of stimulus current with the localized (or defects) states present at the contact region resulting in the current lagging behind the voltage. The results are further supported by direct current measurements that show tungsten to significantly increase carbon nanotube-electrode coupling. The immediate consequence is the reduction of the contact resistance, implying a reduction of electron tunnelling barrier from the electrode to the carbon nanotube

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