Open Access2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT
Author(s) -
Xiaoli Ji,
Baiqing Liu,
Hengjing Tang,
Xuelin Yang,
L. Xue,
Haimei Gong,
Bo Shen,
Ping Han,
Feng Yan
Publication year - 2014
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4894142
Subject(s) - dark current , deep level transient spectroscopy , photodetector , trap (plumbing) , optoelectronics , current (fluid) , detector , materials science , absorption (acoustics) , quantum tunnelling , spectroscopy , penning trap , physics , optics , electron , nuclear physics , quantum mechanics , silicon , meteorology , thermodynamics
We fabricate 2.6 μm InGaAs photodetectors by MBE technology and study its dark current mechanisms. Deep-level transient spectroscopy (DLTS) demonstrates a deep-level trap located at Ec - 0.25 eV in the absorption layer. Using the trap parameters, a dark current model is constructed and the device simulation generates the dark current characteristic which agrees well with the experimental data. The model suggests that the dark current at low reverse voltage is dominated by the Shockley-Read-Hall (SRH) and trap-assisted tunneling (TAT). Furthermore, it predicts some basic rules for suppressing the dark current in 2.6 μm InGaAs detectors
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