Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene | Zendy

Chang-Soo Park | Zendy; Yu Zhao | Zendy; Yoon Shon | Zendy; Chong Seung Yoon | Zendy; Haigun Lee | Zendy; Cheol Jin Lee | Zendy

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Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene

Author(s) -

Chang-Soo Park,

Yu Zhao,

Yoon Shon,

Chong Seung Yoon,

Haigun Lee,

Cheol Jin Lee

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4893240

Subject(s) - graphene , materials science , ferromagnetism , manganese , oxide , doping , magnetic semiconductor , curie temperature , graphene oxide paper , graphene nanoribbons , condensed matter physics , inorganic chemistry , nanotechnology , chemistry , optoelectronics , metallurgy , physics

We have doped manganese-oxide onto graphene by an electrochemical method. Graphene showed a clear ferromagnetic semiconductor behavior after doping of manganese-oxide. The manganese-oxide doped graphene has a coercive field (Hc) of 232 Oe at 10 K, and has the Curie temperature of 270 K from the temperature-dependent resistivity using transport measurement system. The ferromagnetism of manganese-oxide doped graphene attributes to the double-exchange from the coexistence of Mn3+ and Mn4+ on the surface of graphene. In addition, the semiconducting behavior is caused by the formation of manganese-oxide on graphene

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