Open AccessEfficient Schottky-like junction GaAs nanowire photodetector with 9 GHz modulation bandwidth with large active area
Author(s) -
M. Ashkan Seyedi,
Maoqing Yao,
J. O'Brien,
S. Y. Wang,
P.D. Dapkus
Publication year - 2014
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4891764
Subject(s) - photodetector , optoelectronics , materials science , nanowire , bandwidth (computing) , schottky diode , indium tin oxide , capacitance , diffusion capacitance , modulation (music) , schottky barrier , indium , carrier lifetime , optics , thin film , electrode , nanotechnology , physics , silicon , telecommunications , diode , quantum mechanics , computer science , acoustics
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