Open AccessOrigins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots
Author(s) -
S. Huang,
S. J. Kim,
Xiaoqing Pan,
R. S. Goldman
Publication year - 2014
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4891330
Subject(s) - quantum dot , annealing (glass) , materials science , nucleation , dislocation , condensed matter physics , epitaxy , layer (electronics) , gallium arsenide , molecular beam epitaxy , buffer (optical fiber) , crystallography , optoelectronics , chemistry , nanotechnology , composite material , physics , telecommunications , organic chemistry , computer science
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