Open AccessReversible conductance switching characteristics in a polymer-In2O3 nanocrystals junction
Author(s) -
Jongmin Kim,
Dong Uk Lee,
Yongcheol Jo,
Jae-Hyun Han,
HyungJin Kim,
Akbar I. Inamdar,
Wondea Jung,
Hyunsik Im,
Eun Kyu Kim
Publication year - 2014
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4884303
Subject(s) - bistability , reset (finance) , materials science , conductance , polymer , resistive random access memory , nanocrystal , switching time , optoelectronics , non volatile memory , resistive touchscreen , chemical physics , nanotechnology , electrode , chemistry , condensed matter physics , computer science , composite material , physics , financial economics , economics , computer vision
A transparent polymer-based resistive switching device containing In2O3 nanocrystals (NCs) is fabricated, and its nonvolatile memory characteristics are evaluated. Very clear reversible counter-clockwise bipolar-type resistive switching phenomena are observed. Stable retention is demonstrated. An Analysis of the temperature dependence of the bistable resistance states reveals additional features, not reported in previous studies, that the observed resistance switching is due to oxygen ions drift-induced redox reactions at the polymer/In2O3 NCs interface. The RESET and SET switching times (τRESET and τSET), which are defined as pulse widths extrapolated by the steepest slopes in the transition region, are τRESET ∼ 550 nsec and τSET ∼ 900 nsec. The authors propose that microscopic potential modification occurring near the polymer/In2O3 NCs boundaries plays a key role in determining resistive switching properties
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