Ferromagnetism in undoped One-dimensional GaN Nanowires | Zendy

K. Jeganathan | Zendy; V. Purushothaman | Zendy; R. Debnath | Zendy; S. Arumugam | Zendy

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Ferromagnetism in undoped One-dimensional GaN Nanowires

Author(s) -

K. Jeganathan,

V. Purushothaman,

R. Debnath,

S. Arumugam

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4878976

Subject(s) - ferromagnetism , materials science , magnetization , nanowire , condensed matter physics , molecular beam epitaxy , photoluminescence , hysteresis , gallium , magnetic hysteresis , wide bandgap semiconductor , epitaxy , optoelectronics , magnetic field , nanotechnology , physics , metallurgy , layer (electronics) , quantum mechanics

We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ∼0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10−8 mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale

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