Screening effects in ferroelectric resistive switching of BiFeO3 thin films | Zendy

S. Farokhipoor | Zendy; Beatriz Noheda | Zendy

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Screening effects in ferroelectric resistive switching of BiFeO3 thin films

Author(s) -

S. Farokhipoor,

Beatriz Noheda

Publication year - 2014

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4875355

Subject(s) - materials science , ferroelectricity , polarization (electrochemistry) , resistive touchscreen , electrode , thermal conduction , thin film , conductivity , condensed matter physics , optoelectronics , electrical resistivity and conductivity , nanotechnology , composite material , dielectric , electrical engineering , chemistry , physics , engineering

We investigate ferroelectric resistive switching in BiFeO3 thin films by performing local conductivity measurements. By comparing conduction characteristics at artificially up-polarized domains with those at as-grown down-polarized domains, the change in resistance is attributed to the modification of the electronic barrier height at the interface with the electrodes, upon the reversal of the electrical polarization. We also study the effect of oxygen vacancies on the observed conduction and we propose the existence of a different screening mechanism for up and down polarized domains

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