Growth strategies to control tapering in Ge nanowires | Zendy

P. Periwal | Zendy; T. Baron | Zendy; P. Gentile | Zendy; B. Salem | Zendy; F. Bassani | Zendy

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Growth strategies to control tapering in Ge nanowires

Author(s) -

P. Periwal,

T. Baron,

P. Gentile,

B. Salem,

F. Bassani

Publication year - 2014

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4870875

Subject(s) - nanowire , tapering , passivation , materials science , chemical vapor deposition , substrate (aquarium) , diffusion , nanotechnology , conical surface , nanostructure , chemical engineering , coating , heterojunction , optoelectronics , layer (electronics) , composite material , oceanography , computer graphics (images) , physics , geology , computer science , engineering , thermodynamics

We report the effect of PH3 on the morphology of Au catalyzed Ge nanowires (NWs). Ge NWs were grown on Si (111) substrate at 400 °C in the presence of PH3, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH3/GeH4 ratio causes passivation at NW surface. At high PH3 concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH3 flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH3-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth

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