Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer
Author(s) -
Qing Yang,
Xiaohong Zhou,
Takao Nukui,
Yu Saeki,
Sotaro Izumi,
Atsushi Tackeuchi,
Hirokazu Tatsuoka,
Shuhua Liang
Publication year - 2014
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4864750
Subject(s) - photoluminescence , materials science , ultraviolet , optoelectronics , composite number , layer (electronics) , gallium , spontaneous emission , wide bandgap semiconductor , excitation , luminescence , composite material , optics , metallurgy , laser , physics , electrical engineering , engineering
The ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D0X emission is easily saturated than the DAP emission from ZnO/ZnGa2O4 composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa2O4 composite layer
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