Relaxation of vacancy depth profiles in silicon wafers: A low apparent diffusivity of vacancy species | Zendy

V. V. Voronkov | Zendy; R. Falster | Zendy; P. Pichler | Zendy

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Relaxation of vacancy depth profiles in silicon wafers: A low apparent diffusivity of vacancy species

Author(s) -

V. V. Voronkov,

R. Falster,

P. Pichler

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4863225

Subject(s) - vacancy defect , thermal diffusivity , wafer , annealing (glass) , silicon , materials science , diffusion , condensed matter physics , crystallography , chemistry , nanotechnology , metallurgy , thermodynamics , physics

Vacancy depth profiles in silicon wafersinstalled by Rapid Thermal Annealing and monitored by Pt diffusionshow, upon subsequent annealing at 975 or 950 °C, a peculiar evolution: the concentration profile goes down without any trace of vacancy out-diffusion. The estimated apparent diffusivity is less than 1E7 cm2/s at 975 °C. The monitored vacancy species is tentatively identified as a "slow vacancy" that was recently concluded to exist along with other (highly mobile) vacancy species

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