Open AccessQuantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers
Author(s) -
ChienWei Lee,
JennGwo Hwu
Publication year - 2013
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4826886
Subject(s) - quantum , quantization (signal processing) , exponential function , statistical physics , inversion (geology) , approximation error , distribution function , fermi gas , probability density function , physics , quantum mechanics , electron , mathematics , mathematical analysis , paleontology , statistics , algorithm , structural basin , biology
We derive a statistical physics model of two-dimensional electron gas (2DEG) and propose an accurate approximation method for calculating the quantum-mechanical effects of metal-oxide-semiconductor (MOS) structure in accumulation and strong inversion regions. We use an exponential surface potential approximation in solving the quantization energy levels and derive the function of density of states in 2D to 3D transition region by applying uncertainty principle and Schrödinger equation in k-space. The simulation results show that our approximation method and theory of density of states solve the two major problems of previous researches: the non-negligible error caused by the linear potential approximation and the inconsistency of density of states and carrier distribution in 2D to 3D transition region