Charge doping of graphene in metal/graphene/dielectric sandwich structures evaluated by C-1s core level photoemission spectroscopy
Author(s) -
Arjun Dahal,
Rafik Addou,
Horacio Coy-Diaz,
James Lallo,
Matthias Batzill
Publication year - 2013
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4824038
Subject(s) - graphene , materials science , doping , dielectric , fermi level , photoemission spectroscopy , metal , condensed matter physics , spectroscopy , x ray photoelectron spectroscopy , nanotechnology , optoelectronics , nuclear magnetic resonance , physics , electron , metallurgy , quantum mechanics
We show that for metal/graphene/dielectric sandwich structures, charge doping in graphene depends on both the work functions of the metal and the dielectric. Using C-1s core level photoemission spectroscopy we determine the charge doping in graphene for one-sided metal contacts as well as for sandwich structures that are commonly used in graphene devices. The measured Fermi-level shifts are in good agreement with a model that predicts that the difference in charge doping for graphene on a metal compared to graphene sandwiched between a metal and dielectric is given by ΔEF ≈ 0.44 × √(Φmetal − Φdielectric)
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