Open AccessLight extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography
Author(s) -
Kui Wu,
Yiyun Zhang,
Tongbo Wei,
Ding Lan,
Bo Sun,
Haiyang Zheng,
Hongxi Lu,
Yu Chen,
Junxi Wang,
Yi Luo,
Jinmin Li
Publication year - 2013
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4823478
Subject(s) - light emitting diode , materials science , nanosphere lithography , optoelectronics , indium tin oxide , photonic crystal , lithography , diode , finite difference time domain method , photonics , light emission , electroluminescence , quantum dot , layer (electronics) , optics , nanotechnology , fabrication , medicine , alternative medicine , physics , pathology
The InGaN multiple quantum well light-emitting diodes (LEDs) with different sizes of indium-tin-oxide (ITO) nanobowl photonic crystal (PhC) structure has been fabricated using self-assembled monolayer nanosphere lithography. The light output power (LOP) of PhC LEDs (at 350 mA) has been enhanced by 63.5% and the emission divergence exhibits a 28.8° reduction compared to conventional LEDs without PhC structure. Current-Voltage curves have shown that these PhC structures on ITO layer will not degrade the LED electrical properties. The finite-difference time-domain simulation (FDTD) has also been performed for light extraction and emission characteristics, which is consistent with the experimental results
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