Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN | Zendy

Yusuke Sakai | Zendy; S. Lawrence Selvaraj | Zendy; Osamu Oda | Zendy; Takashi Egawa | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN

Author(s) -

Yusuke Sakai,

S. Lawrence Selvaraj,

Osamu Oda,

Takashi Egawa

Publication year - 2013

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4819245

Subject(s) - materials science , band diagram , optoelectronics , wide bandgap semiconductor , band gap , layer (electronics) , semiconductor , threshold voltage , acceptor , oxide , voltage , transistor , condensed matter physics , nanotechnology , electrical engineering , metallurgy , physics , engineering

The conditions for preparing normally-off GaN devices incorporating semi-insulating (SI) GaN materials are explored. The properties of SI GaN where carbon behaves as a deep level acceptor are predicted using a Shockley diagram. Metal-oxide-semiconductor (MOS) structures based upon these on SI-GaN layers are designed. The bandgap alignment of these structures is analyzed using Poisson equations. Normally-off operation is shown to be possible in devices featuring a thin n-GaN layer and SI-GaN layer, because of a higher conduction band energy. It is also shown that higher threshold voltage can be achieved by reducing the carrier concentration of the n-GaN channel layer

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research