Ti-catalyzed HfSiO4 formation in HfTiO4 films on SiO2 studied by Z-contrast scanning electron microscopy | Zendy

E. Hoppe | Zendy; Massiel Cristina Cisneros-Morales | Zendy; C. R. Aita | Zendy

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Ti-catalyzed HfSiO4 formation in HfTiO4 films on SiO2 studied by Z-contrast scanning electron microscopy

Author(s) -

E. Hoppe,

Massiel Cristina Cisneros-Morales,

C. R. Aita

Publication year - 2013

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4818171

Subject(s) - materials science , scanning electron microscope , raman spectroscopy , silicate , ternary operation , analytical chemistry (journal) , catalysis , spectroscopy , oxide , crystallography , chemical engineering , metallurgy , chemistry , optics , composite material , biochemistry , physics , chromatography , quantum mechanics , computer science , programming language , engineering

Hafnon (HfSiO4) as it is initially formed in a partially demixed film of hafnium titanate (HfTiO4) on fused SiO2 is studied by atomic number (Z) contrast high resolution scanning electron microscopy, x-ray diffraction, and Raman spectroscopy and microscopy. The results show exsoluted Ti is the catalyst for hafnon formation by a two-step reaction. Ti first reacts with SiO2 to produce a glassy Ti-silicate. Ti is then replaced by Hf in the silicate to produce HfSiO4. The results suggest this behavior is prototypical of other Ti-bearing ternary or higher order oxide films on SiO2 when film thermal instability involves Ti exsolution

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