The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy | Zendy

Yuanmin Du | Zendy; Amit Kumar | Zendy; Hui Pan | Zendy; Kaiyang Zeng | Zendy; Shijie Wang | Zendy; Ping Yang | Zendy; Andrew T. S. Wee | Zendy

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The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy

Author(s) -

Yuanmin Du,

Amit Kumar,

Hui Pan,

Kaiyang Zeng,

Shijie Wang,

Ping Yang,

Andrew T. S. Wee

Publication year - 2013

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4818119

Subject(s) - kelvin probe force microscope , conductive atomic force microscopy , microscopy , resistive touchscreen , photoconductive atomic force microscopy , materials science , electrical conductor , atomic force microscopy , nanotechnology , optoelectronics , thin film , volta potential , electric field , electrostatic force microscope , condensed matter physics , scanning capacitance microscopy , optics , composite material , electrical engineering , scanning confocal electron microscopy , physics , engineering , quantum mechanics

The resistive switching characteristics of TiO2 thin films were investigated using conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). The as-prepared TiO2 thin films were modulated into higher and lower resistance states by applying a local electric field. We showed that the resistive switching results from charge injection and release assisted by electro-migration of oxygen ions. An integrated model combined with filamentary and interfacial effects was utilized to elucidate the experimentally observed phenomenon

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