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Carbon nanotube-ZnO nanowire hybrid architectures as multifunctional devices
Author(s) -
Laishram Tomba Singh,
Ramu Pasupathi Sugavaneshwar,
Karuna Kar Nanda
Publication year - 2013
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4817837
Subject(s) - carbon nanotube , materials science , nanowire , nanotechnology , transistor , field effect transistor , schottky diode , nanoelectronics , optoelectronics , current (fluid) , wide bandgap semiconductor , ultraviolet , diode , electrical engineering , voltage , engineering
We report on multifunctional devices based on CNT arrays-ZnO nanowires hybrid architectures. The hybrid structure exhibit excellent high current Schottky like behavior with ZnO as p-type and an ideality factor close to the ideal value. Further the CNT-ZnO hybrid structures can be used as high current p-type field effect transistors that can deliver currents of the order of milliamperes and also can be used as ultraviolet detectors with controllable current on-off ratio and response time. The p-type nature of ZnO and possible mechanism for the rectifying characteristics of CNT-ZnO has been presented

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