Open AccessStacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress
Author(s) -
Kazuya Konishi,
S. Yamamoto,
Shuhei Nakata,
Yu Nakamura,
Yosuke Nakanishi,
Takanori Tanaka,
Yoichiro Mitani,
Nobuyuki Tomita,
Yoshihiko Toyoda,
Satoshi Yamakawa
Publication year - 2013
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4812590
Subject(s) - materials science , nucleation , stacking fault , dislocation , stacking , transmission electron microscopy , stress (linguistics) , focused ion beam , optoelectronics , etching (microfabrication) , layer (electronics) , ion , composite material , nanotechnology , chemistry , organic chemistry , linguistics , philosophy
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