Hysteresis mechanism and control in pentacene organic field-effect transistors with polymer dielectric
Author(s) -
Wei Huang,
Wei Shi,
Shijiao Han,
Junsheng Yu
Publication year - 2013
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4807660
Subject(s) - pentacene , materials science , dielectric , hysteresis , polyvinyl alcohol , polymer , organic semiconductor , transistor , field effect transistor , gate dielectric , optoelectronics , chemical engineering , thin film transistor , composite material , layer (electronics) , voltage , condensed matter physics , electrical engineering , physics , engineering
Hysteresis mechanism of pentacene organic field-effect transistors (OFETs) with polyvinyl alcohol (PVA) and/or polymethyl methacrylate (PMMA) dielectrics is studied. Through analyzing the electrical characteristics of OFETs with various PVA/PMMA arrangements, it shows that charge, which is trapped in PVA bulk and at the interface of pentacene/PVA, is one of the origins of hysteresis. The results also show that memory window is proportional to both trap amount in PVA and charge density at the gate/PVA or PVA/pentacene interfaces. Hence, the controllable memory window of around 0 ∼ 10 V can be realized by controlling the thickness and combination of triple-layer polymer dielectrics
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