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Dielectric response and magnetoelectric coupling in single crystal gallium ferrite
Author(s) -
Somdutta Mukherjee,
Rajeev Gupta,
Ashish Garg
Publication year - 2013
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4806762
Subject(s) - materials science , dielectric , condensed matter physics , gallium , ferrite (magnet) , capacitance , relaxation (psychology) , single crystal , nuclear magnetic resonance , transition temperature , superconductivity , composite material , optoelectronics , metallurgy , chemistry , electrode , physics , psychology , social psychology
Here we report the dielectric response and electric conduction behavior of magnetoelectric gallium ferrite single crystals studied using impedance analysis in time and temperature domain. The material exhibits two distinct relaxation processes: a high frequency bulk response and a low frequency interfacial boundary layer response. Calculated bulk capacitance as a function of temperature showed an anomaly at ferri- to paramagnetic transition temperature (∼ 300 K), suggestive of magneto-dielectric coupling in the material. Interestingly, we also witness an abrupt change in the activation energy at ∼ 220 K, in the vicinity of spin-glass transition temperature in GaFeO3

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