Open AccessControl of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs
Author(s) -
Weihuang Yang,
Jinchai Li,
Wei Lin,
Shuping Li,
Hangyang Chen,
Dayi Liu,
Yang Xu,
Junyong Kang
Publication year - 2013
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4804247
Subject(s) - materials science , optoelectronics , epitaxy , light emitting diode , electroluminescence , photoluminescence , sapphire , diode , ultraviolet , substrate (aquarium) , quantum well , wide bandgap semiconductor , surface roughness , molecular beam epitaxy , optics , nanotechnology , layer (electronics) , laser , composite material , physics , oceanography , geology
Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs) with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully
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