Enhanced performance of GaN-based light-emitting diodes with graphene/Ag nanowires hybrid films | Zendy

Zhi Li | Zendy; Junjie Kang | Zendy; Zhiqiang Liu | Zendy; Chengxiao Du | Zendy; Xiao Lee | Zendy; Xiao Li | Zendy; Liancheng Wang | Zendy; Xiaoyan Yi | Zendy; Hongwei Zhu | Zendy; Guohong Wang | Zendy

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Enhanced performance of GaN-based light-emitting diodes with graphene/Ag nanowires hybrid films

Author(s) -

Zhi Li,

Junjie Kang,

Zhiqiang Liu,

Chengxiao Du,

Xiao Lee,

Xiao Li,

Liancheng Wang,

Xiaoyan Yi,

Hongwei Zhu,

Guohong Wang

Publication year - 2013

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4803647

Subject(s) - graphene , materials science , optoelectronics , contact resistance , schottky barrier , nanowire , light emitting diode , sheet resistance , diode , schottky diode , transmittance , nanotechnology , layer (electronics)

Incorporating Ag nanowires with graphene resulted in improved electrical conductivity and enhanced contact properties between graphene and p-GaN. The graphene/AgNWs hybrid films exhibited high transmittance and lower sheet resistance compared to bare graphene. The specific contact resistance between graphene and p-GaN reduced nearly an order of magnitude with the introduction of AgNWs. As a result, light emitting diodes based on the hybrid films showed 44% lower forward voltage and 2-fold higher light output power. The enhanced performance was attributed to the bridging by AgNWs of cracks, grain boundaries in graphene and the reduction of Schottky barrier height at graphene/ p-GaN interface

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