Open AccessMixture formation of ErxYb2-xSi2O7 and ErxYb2-xO3 on Si for broadening the C-band in an optical amplifier
Author(s) -
Hiroo Omi,
Yoshiyuki Abe,
Maria Anagnosti,
Takehiko Tawara
Publication year - 2013
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4800714
Subject(s) - photoluminescence , materials science , crystallite , sputtering , annealing (glass) , analytical chemistry (journal) , diffraction , thin film , x ray crystallography , synchrotron radiation , optics , optoelectronics , chemistry , nanotechnology , physics , chromatography , metallurgy , composite material
Thin films composed of polycrystalline ErxYb2-xO3 grains and crystalline ErxYb2-xSi2O7 layers were formed on a Si(111) substrate by RF - sputtering and subsequent thermal annealing in Ar gas ambient up to 1100 °C. The films were characterized by synchrotron radiation grazing incidence X-ray diffraction, cross-sectional transmission microscopy, energy dispersive X-ray spectrometry and micro photoluminescence measurements. In the annealed film of 950 °C it is observed that the I15/2 - I13/2 Er3+ photoluminescent transition exhibits simultaneously maximum intensity and peak width at room temperature. This effect satisfies the requirements for broadening the C-band of an optical amplifier on Si
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom