Electron transport through nano-MOSFET in presence of electron-electron interaction | Zendy

Hamidreza Simchi | Zendy; Mehdi Heidarisaani | Zendy; Mahdi Esmaeilzadeh | Zendy

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Electron transport through nano-MOSFET in presence of electron-electron interaction

Author(s) -

Hamidreza Simchi,

Mehdi Heidarisaani,

Mahdi Esmaeilzadeh

Publication year - 2013

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4795736

Subject(s) - electron , mosfet , voltage , materials science , quantization (signal processing) , condensed matter physics , nano , distribution function , electron transport chain , threshold voltage , atomic physics , physics , chemistry , transistor , computer science , biochemistry , quantum mechanics , composite material , computer vision

We investigate the effect of electron-electron interaction on voltage distribution, charge distribution and current-voltage curve of two dimensional nano-MOSFETs with dimension equal to 1 × 1 nm2, 3 × 3 nm2, and 6 × 6 nm2 by using non-equilibrium Green function method. It is shown that the turn on voltage increases by decreasing the size of sample because of size quantization. Also we show that for a critical drain-source voltage a negative resistance is seen at current-voltage curve of 1 × 1 nm2 sample because of electron-electron interaction, and in consequence it can tolerate lower gate voltage in real practical applications

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