
Optical endpoint detection for plasma reduction of graphene oxide
Author(s) -
MaengJun Kim,
Yung Ho Kahng,
Yong Jae Kim,
T. Prem Kumar,
KwangMook Park,
Kwang-Hee Lee,
JaeHyung Jang
Publication year - 2013
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4795240
Subject(s) - graphene , raman spectroscopy , x ray photoelectron spectroscopy , oxide , materials science , plasma , emission intensity , intensity (physics) , spectroscopy , degradation (telecommunications) , analytical chemistry (journal) , optoelectronics , nanotechnology , chemical engineering , chemistry , optics , electronic engineering , metallurgy , photoluminescence , environmental chemistry , physics , engineering , quantum mechanics
The plasma reduction process for the production of reduced graphene oxide (rGO) requires precise process control in order to avoid the degradation of electrical characteristics. We report that the reduction status of the graphene oxides could be determined by monitoring the optical emission intensity at 844.6 nm. Properties of the rGO samples processed with various plasma exposure times were characterized by X-ray photoelectron spectroscopy, Raman spectroscopy, atomic force microscopy, and 4-point probe measurements. Optimum electrical performance and surface morphology were obtained from the sample for which the reduction process was stopped when the emission intensity at 844.6 nm began to decrease