Open AccessGamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors
Author(s) -
Casey M. Schwarz,
Anupama Yadav,
M. Shatkhin,
Elena Flitsiyan,
Leonid Chernyak,
V. Kasiyan,
Lu Liu,
Yuyin Xi,
F. Ren,
S. J. Pearton,
C. F. Lo,
J. W. Johnson,
E. Danilova
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4792240
Subject(s) - materials science , irradiation , transistor , optoelectronics , electron mobility , wide bandgap semiconductor , induced high electron mobility transistor , electron beam processing , electron , radiation , high electron mobility transistor , voltage , electrical engineering , optics , physics , quantum mechanics , engineering , nuclear physics
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