Open AccessInterfacial bonding and electronic structure of HfO2/GaSb interfaces: A first principles study
Author(s) -
K. Xiong,
Weichao Wang,
D. M. Zhernokletov,
K. C. Santosh,
Roberto C. Longo,
Robert M. Wallace,
Kyeongjae Cho
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4775665
Subject(s) - band gap , materials science , electronic structure , conduction band , electronic band structure , valence band , wide bandgap semiconductor , valence (chemistry) , condensed matter physics , semimetal , optoelectronics , crystallography , chemistry , electron , physics , organic chemistry , quantum mechanics
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