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Thermal electric effects in Fe|GaAs|Fe tunnel junctions
Author(s) -
Xingtao Jia,
Ke Xia
Publication year - 2012
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4773464
Subject(s) - thermoelectric effect , tunnel junction , seebeck coefficient , condensed matter physics , materials science , formalism (music) , gallium arsenide , electric current , thermal , tunnel magnetoresistance , optoelectronics , thermal conductivity , quantum tunnelling , electrical engineering , composite material , physics , thermodynamics , ferromagnetism , art , musical , visual arts , engineering
We study the spin polarized thermoelectric effects on Fe|GaAs|Fe tunnel junction using a generalized Landauer-Büttiker formalism, where the energy flow is described on the same footing as the electric current. The Seebeck coefficient of tunnel junction will change sign as the GaAs thickness increases. We demonstrate the thermally induced STT on Fe|GaAs|Fe tunnel junction is robust against the interfacial defects and is non-negligible

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