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A high-K ferroelectric relaxor terpolymer as a gate dielectric for organic thin film transistors
Author(s) -
Shan Wu,
Ming Shao,
Quinn Burlingame,
XiangZhong Chen,
Minren Lin,
Kai Xiao,
Q. M. Zhang
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4773186
Subject(s) - materials science , dielectric , pentacene , ferroelectricity , gate dielectric , optoelectronics , organic semiconductor , transistor , high κ dielectric , semiconductor , misfet , permittivity , thin film transistor , layer (electronics) , field effect transistor , voltage , nanotechnology , electrical engineering , engineering

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