Open AccessInfrared detectors based on semiconductor p-n junction of PbSe
Author(s) -
V. Kasiyan,
Z. Dashevsky,
Casey M. Schwarz,
M. Shatkhin,
Elena Flitsiyan,
Leonid Chernyak,
D. R. Khokhlov
Publication year - 2012
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4759011
Subject(s) - photosensitivity , optoelectronics , photodetector , diode , materials science , thin film , semiconductor , chemical vapor deposition , detector , infrared , infrared detector , conductivity , wide bandgap semiconductor , p–n junction , operating temperature , optics , chemistry , nanotechnology , electrical engineering , physics , engineering
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