Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature | Zendy

Shang Chen | Zendy; Yi Lu | Zendy; Ryosuke Kometani | Zendy; Kenji Ishikawa | Zendy; Hiroki Kondo | Zendy; Yutaka Tokuda | Zendy; Makoto Sekine | Zendy; Masaru Hori | Zendy

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Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature

Author(s) -

Shang Chen,

Yi Lu,

Ryosuke Kometani,

Kenji Ishikawa,

Hiroki Kondo,

Yutaka Tokuda,

Makoto Sekine,

Masaru Hori

Publication year - 2012

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4729448

Subject(s) - photoluminescence , hydrogen , plasma , radical , irradiation , analytical chemistry (journal) , x ray photoelectron spectroscopy , ion , in situ , chemistry , materials science , radiochemistry , atomic physics , nuclear magnetic resonance , optoelectronics , environmental chemistry , physics , organic chemistry , quantum mechanics , nuclear physics

The effect of in-situ exposure of n-GaN damaged by Cl2 plasma to atomic hydrogen (H radicals) at room temperature was investigated. We found that the PL intensities of the band-edge emission, which had been drastically reduced by plasma-beam irradiation at a Cl ion dose of 5 × 1016 cm−2, recovered to values close to those of as-grown samples after H radical exposure at a dose of 3.8 × 1017 cm−2. XPS revealed the appearance of a peak at a binding energy of 18.3 eV, which is tentatively assigned to Ga-H, and confirmed the removal of Cl after H radical exposure

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