Growth and characterization of Bi2Se3 crystals by chemical vapor transport | Zendy

WenHe Jiao | Zendy; Shuai Jiang | Zendy; Changfeng Feng | Zendy; ZhuAn Xu | Zendy; GuangHan Cao | Zendy; Min Xu | Zendy; Donglai Feng | Zendy; Atsuo Yamada | Zendy; K. Matsubayashi | Zendy; Yoshiya Uwatoko | Zendy

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Growth and characterization of Bi₂Se₃ crystals by chemical vapor transport

Author(s) -

WenHe Jiao,

Shuai Jiang,

Changfeng Feng,

ZhuAn Xu,

GuangHan Cao,

Min Xu,

Donglai Feng,

Atsuo Yamada,

K. Matsubayashi,

Yoshiya Uwatoko

Publication year - 2012

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4727957

Subject(s) - topological insulator , electrical resistivity and conductivity , materials science , residual resistivity , superconductivity , characterization (materials science) , iodine , condensed matter physics , analytical chemistry (journal) , crystallography , chemistry , nanotechnology , metallurgy , physics , quantum mechanics , chromatography

Regularly-shaped high-quality Bi2Se3 crystals were grown by a chemical vapor transport using iodine as the transport agent. In addition to exhibiting a characteristic Dirac cone for a topological insulator, the Bi2Se3 crystals show some outstanding properties including additional crystallographic surfaces, large residual resistance ratio (∼10), and high mobility (∼8000 cm2·V−1·s−1). The low-temperature resistivity abnormally increases with applying pressures up to 1.7 GPa, and no superconductivity was observed down to 0.4 K

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