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In this study, Si QDs were formed inside silica matrix by implantation and annealing. Subsequent implantations with Ag+2 ions at different energies were performed in order to vary the distance between the previously formed Si QDs and newly aggregated Ag NPs. The coupling between them was observed through the PL energy and intensity from Si QDs. A PL enhancement is well evidenced at the lowest implantation energy (1 MeV), but at higher energies, a decrease in intensity (2 MeV) and a quenching (3 MeV) are observed

Enhancement and quenching of photoluminescence from silicon quantum dots by silver nanoparticles in a totally integrated configuration