Open AccessFormation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases
Author(s) -
Yoshinobu Aoyagi,
Misaichi Takeuchi,
Sohachi Iwai,
Hideki Hirayama
Publication year - 2012
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.3698156
Subject(s) - epitaxy , materials science , optoelectronics , acceptor , layer (electronics) , wide bandgap semiconductor , pulse (music) , nanotechnology , condensed matter physics , voltage , electrical engineering , physics , engineering
A drastic increase in the p-type carrier concentration and decrease in the activation energy of an acceptor are achieved by using a method of pulse supply of the source gases for AlGaN and GaN. This method offers a new way of producing a low-resistance p-AlGaN and p-GaN epitaxial layer
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