Open AccessEpitaxial lateral overgrowth of InN by rf-plasma-assisted molecular-beam epitaxy
Author(s) -
Jumpei Kamimura,
Katsumi Kishino,
Akihiko Kikuchi
Publication year - 2011
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.3664138
Subject(s) - molecular beam epitaxy , materials science , epitaxy , transmission electron microscopy , dislocation , laser linewidth , sapphire , optoelectronics , optics , layer (electronics) , laser , nanotechnology , physics , composite material
The orientation-dependent lateral growth of InN was studied and the epitaxial lateral overgrowth (ELO) of InN by rf-plasma-assisted molecular-beam epitaxy was demonstrated for the first time using stripe molybdenum (Mo)-mask-patterned sapphire (0001) substrates. Transmission electron microscopy observation revealed a high dislocation density of ∼5x10-9 cm-2 in the window region. By contrast, very few threading dislocations were observed in the wing region. In particular, there were no threading dislocations in the superficial layer of up to 3 μm width. An InN ELO sample exhibited narrow near-IR emission with a peak photon energy of 0.677 eV and a linewidth of 16.7 meV at 4 K