Epitaxial lateral overgrowth of InN by rf-plasma-assisted molecular-beam epitaxy | Zendy

Jumpei Kamimura | Zendy; Katsumi Kishino | Zendy; Akihiko Kikuchi | Zendy

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Epitaxial lateral overgrowth of InN by rf-plasma-assisted molecular-beam epitaxy

Author(s) -

Jumpei Kamimura,

Katsumi Kishino,

Akihiko Kikuchi

Publication year - 2011

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.3664138

Subject(s) - molecular beam epitaxy , materials science , epitaxy , transmission electron microscopy , dislocation , laser linewidth , sapphire , optoelectronics , optics , layer (electronics) , laser , nanotechnology , physics , composite material

The orientation-dependent lateral growth of InN was studied and the epitaxial lateral overgrowth (ELO) of InN by rf-plasma-assisted molecular-beam epitaxy was demonstrated for the first time using stripe molybdenum (Mo)-mask-patterned sapphire (0001) substrates. Transmission electron microscopy observation revealed a high dislocation density of ∼5x10-9 cm-2 in the window region. By contrast, very few threading dislocations were observed in the wing region. In particular, there were no threading dislocations in the superficial layer of up to 3 μm width. An InN ELO sample exhibited narrow near-IR emission with a peak photon energy of 0.677 eV and a linewidth of 16.7 meV at 4 K

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